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in Thyristors
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Thyristors
A thyristor is a solid-state semiconductor device with four layers of alternating N and P-type material. They act exclusively as bistable switches, conducting when their gate receives a current trigger, and continue to conduct while they are forward biased (that is, while the voltage across the device is not reversed). A three-lead thyristor is designed to control the larger current of its two leads by combining that current with the smaller current or voltage of its other lead - known as its control lead. In contrast, a two-lead thyristor is designed to 'switch on' if the potential difference between its leads is sufficiently large - a value representing its breakdown voltage. Some sources define silicon-controlled rectifiers and thyristors as synonymous. Other sources define thyristors as a larger set of devices with at least four layers of alternating N and P-type material. The first thyristor devices were released commercially in 1956. Because thyristors can control a relatively large amount of power and voltage with a small device, they find wide application in control of electric power, ranging from light dimmers and electric motor speed control to high-voltage direct current power transmission. Thyristors may be used in power-switching circuits, relay-replacement circuits, inverter circuits, oscillator circuits, level-detector circuits, chopper circuits, light-dimming circuits, low-cost timer circuits, logic circuits, speed-control circuits, phase-control circuits, etc. Originally thyristors relied only on current reversal to turn them off, making them difficult to apply for direct current; newer device types can be turned on and off through the control gate signal. A thyristor is not a proportional device like a transistor. In other words, a thyristor can only be fully on or off, while a transistor can lie in between on and off states. This makes a thyristor unsuitable as an analog amplifier, but useful as a switch.
Transistor > Thyristors > FET Transistors > MOSFET
Part No. | DS | Manufacturer | D/C | Qty | Region | Action |
---|---|---|---|---|---|---|
ZXM61P02FTA | Diodes | 2020+ | 3000 | U.S.A. | Request A Quote | |
ZXM61P02FTA | Diodes | - | 15190 | Germany | Request A Quote | |
ZXM61P02FTA | Diodes | - | 5000 | China | Request A Quote | |
ZXM61P02FTA | Diodes | 2017+ | 221100 | Japan | Request A Quote | |
ZXM61P02FTA | Diodes | 2023+ | 6062 | China | Request A Quote | |
ZXM61P02FTA | Diodes | 2020+ | 3000 | South Korea | Request A Quote | |
ZXM61P02FTA | Diodes | 2024+ | 15000 | China | Request A Quote | |
ZXM61P02FTA | Diodes | 2023+ | 66540 | China | Request A Quote | |
ZXM61P02FTA | Diodes | - | 2400 | United Kingdom | Request A Quote | |
ZXM61P02FTA | Diodes | 1914 | 3500 | U.S.A. | Request A Quote |
Part No. Variations
- ZXM61N02F
- ZXM61N02FTA
- ZXM61N02FTAMOS
- ZXM61N02FTC
- ZXM61N03F
- ZXM61N03FTA
- ZXM61N03FTAMOS
- ZXM61N03FTR
- ZXM61P02F
- ZXM61P02FTA
- ZXM61P02FTAMOS
- ZXM61P03F
- ZXM61P03FTA
- ZXM61P03FTAIC
- ZXM62N02E6
- ZXM62N02E6TA
- ZXM62N03E6
- ZXM62N03E6TA
- ZXM62N03GTA
- ZXM62P02E6
- ZXM62P02E6TA
- ZXM62P02E6TAMOS
- ZXM62P03E6CT
- ZXM62P03E6TA
- ZXM62P03GTA
- ZXM62PO2E6TA
- ZXM64N02XTA
- ZXM64N02XTAMOS
- ZXM64N02XTAPB
- ZXM64N035G
- ZXM64N035GTA
- ZXM64N035L3
- ZXM64N03X
- ZXM64N03XTA
- ZXM64P02
- ZXM64P02X
- ZXM64P02XTA
- ZXM64P035
- ZXM64P035G
- ZXM64P035GTA
- ZXM64P035L3
- ZXM64P03XTA
- ZXM66N03N8
- ZXM66N03N8TA
- ZXM66P02N8TA