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in Thyristors
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Thyristors
A thyristor is a solid-state semiconductor device with four layers of alternating N and P-type material. They act exclusively as bistable switches, conducting when their gate receives a current trigger, and continue to conduct while they are forward biased (that is, while the voltage across the device is not reversed). A three-lead thyristor is designed to control the larger current of its two leads by combining that current with the smaller current or voltage of its other lead - known as its control lead. In contrast, a two-lead thyristor is designed to 'switch on' if the potential difference between its leads is sufficiently large - a value representing its breakdown voltage. Some sources define silicon-controlled rectifiers and thyristors as synonymous. Other sources define thyristors as a larger set of devices with at least four layers of alternating N and P-type material. The first thyristor devices were released commercially in 1956. Because thyristors can control a relatively large amount of power and voltage with a small device, they find wide application in control of electric power, ranging from light dimmers and electric motor speed control to high-voltage direct current power transmission. Thyristors may be used in power-switching circuits, relay-replacement circuits, inverter circuits, oscillator circuits, level-detector circuits, chopper circuits, light-dimming circuits, low-cost timer circuits, logic circuits, speed-control circuits, phase-control circuits, etc. Originally thyristors relied only on current reversal to turn them off, making them difficult to apply for direct current; newer device types can be turned on and off through the control gate signal. A thyristor is not a proportional device like a transistor. In other words, a thyristor can only be fully on or off, while a transistor can lie in between on and off states. This makes a thyristor unsuitable as an analog amplifier, but useful as a switch.
Transistor > Thyristors > FET Transistors > MOSFET
| Part No. | DS | Manufacturer | D/C | Qty | Region | Action |
|---|---|---|---|---|---|---|
| SPA11N60C3 | Infineon | 1937+ | 14000 | China | Request A Quote | |
| SPA11N60C3 | Infineon | 2022 | 900 | China | Request A Quote | |
| SPA11N60C3 | Infineon | 1923 | 381 | Japan | Request A Quote | |
| SPA11N60C3 | Infineon | 201546+ | 500 | China | Request A Quote | |
| SPA11N60C3 | Infineon | 2021+ | 8800 | China | Request A Quote | |
| SPA11N60C3 | Infineon | - | 500 | China | Request A Quote | |
| SPA11N60C3 | Infineon | 202309+ | 150 | South Korea | Request A Quote | |
| SPA11N60C3 | Infineon | 201546+ | 500 | Hong Kong | Request A Quote | |
| SPA11N60C3 | Infineon | 2022+ | 9680 | Japan | Request A Quote | |
| SPA11N60C3 | Infineon | 2001 | 20 | France | Request A Quote | |
| SPA11N60C3 | Infineon | 2023+ | 5120 | China | Request A Quote | |
| SPA11N60C3 | Infineon | 2017+ | 15000 | China | Request A Quote | |
| SPA11N60C3 | Infineon | - | 6300 | Japan | Request A Quote | |
| SPA11N60C3 | Infineon | 200444 | 350 | Spain | Request A Quote |
Part No. Variations
- SPB1
- SPB10
- SPB100
- SPB100N03S203
- SPB100N03S203G
- SPB100N03S2L03
- SPB100N03S2L03G
- SPB100N04S204
- SPB100N04S2L03
- SPB100N06S205
- SPB100N06S2L05
- SPB100N08S207MOS
- SPB100N08S2L07
- SPB100UFA
- SPB101B1
- SPB101BG
- SPB101C1
- SPB106AP1
- SPB106PS
- SPB10N10
- SPB10N10G
- SPB10N10L
- SPB10N10LMOS
- SPB10OPN
- SPB110
- SPB110N08S2L07
- SPB113
- SPB114
- SPB115
- SPB117
- SPB118
- SPB11N60C2
- SPB11N60C3
- SPB11N60C3ATMA1
- SPB11N60C3MOS
- SPB11N60C5
- SPB11N60S5
- SPB12012
- SPB12FD4320R
- SPB12N50C3
- SPB12N50C3MOS
- SPB12R40
- SPB13070R564GP
- SPB150UFA
- SPB15A100KA8
- SPB15A100KAB
- SPB15A101KA8
- SPB16045
- SPB160N04
- SPB160N04S203
- SPB160N04S203MOS
- SPB160N04S2L03
- SPB1626PS
- SPB16N50C3
- SPB16N50C3ATMA1
- SPB16N50C3MOS
- SPB1751E
- SPB1793H
- SPB17N80C3
- SPB17N80C317N80C3
- SPB17N80C3ATMA1
- SPB17N80C3MOS
- SPB1804H
- SPB1805H
- SPB1806H
- SPB18P06P
- SPB18P06P18P06P
- SPB18P06PG
- SPB18P06PGATMA1
- SPB18P06PMOS
