Results for: SF18
in Thyristors
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Thyristors
A thyristor is a solid-state semiconductor device with four layers of alternating N and P-type material. They act exclusively as bistable switches, conducting when their gate receives a current trigger, and continue to conduct while they are forward biased (that is, while the voltage across the device is not reversed). A three-lead thyristor is designed to control the larger current of its two leads by combining that current with the smaller current or voltage of its other lead - known as its control lead. In contrast, a two-lead thyristor is designed to 'switch on' if the potential difference between its leads is sufficiently large - a value representing its breakdown voltage. Some sources define silicon-controlled rectifiers and thyristors as synonymous. Other sources define thyristors as a larger set of devices with at least four layers of alternating N and P-type material. The first thyristor devices were released commercially in 1956. Because thyristors can control a relatively large amount of power and voltage with a small device, they find wide application in control of electric power, ranging from light dimmers and electric motor speed control to high-voltage direct current power transmission. Thyristors may be used in power-switching circuits, relay-replacement circuits, inverter circuits, oscillator circuits, level-detector circuits, chopper circuits, light-dimming circuits, low-cost timer circuits, logic circuits, speed-control circuits, phase-control circuits, etc. Originally thyristors relied only on current reversal to turn them off, making them difficult to apply for direct current; newer device types can be turned on and off through the control gate signal. A thyristor is not a proportional device like a transistor. In other words, a thyristor can only be fully on or off, while a transistor can lie in between on and off states. This makes a thyristor unsuitable as an analog amplifier, but useful as a switch.
Transistor > Thyristors > FET Transistors > MOSFET
| Part No. | DS | Manufacturer | D/C | Qty | Region | Action |
|---|---|---|---|---|---|---|
| STD18N55M5 | STM | 2019+ | 9000 | Hong Kong | Request A Quote | |
| STD18N55M5 | STM | - | 67040 | Japan | Request A Quote | |
| STD18N55M5 | STM | - | 2500 | South Korea | Request A Quote | |
| STD18N55M5 | STM | 2024+ | 100000 | China | Request A Quote | |
| STD18N55M5 | STM | 2019 | 7000 | Hong Kong | Request A Quote |
Part No. Variations
- SF18
- SF1806Y224ZBNE
- SF1806Y224ZBNET
- SF180881EASBA1
- SF1809102Y4B
- SF180942GASBA
- SF180942GASBA1
- SF1810103Y2B
- SF1811
- SF1812A
- SF181842EAUB01
- SF181842PASBA
- SF181842PASBA1
- SF181850
- SF181900BASUA1
- SF181900N8SUA3
- SF181960DASBA1
- SF181960DASBAI
- SF1849
- SF184R0
- SF18508
- SF18508KV
- SF188E
- SF188R0
- SF188R1
- SF18G
- SF18GA0
- SF18R0
- SF18YAN
