Results for: MDF11N60
in Thyristors
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Thyristors
A thyristor is a solid-state semiconductor device with four layers of alternating N and P-type material. They act exclusively as bistable switches, conducting when their gate receives a current trigger, and continue to conduct while they are forward biased (that is, while the voltage across the device is not reversed). A three-lead thyristor is designed to control the larger current of its two leads by combining that current with the smaller current or voltage of its other lead - known as its control lead. In contrast, a two-lead thyristor is designed to 'switch on' if the potential difference between its leads is sufficiently large - a value representing its breakdown voltage. Some sources define silicon-controlled rectifiers and thyristors as synonymous. Other sources define thyristors as a larger set of devices with at least four layers of alternating N and P-type material. The first thyristor devices were released commercially in 1956. Because thyristors can control a relatively large amount of power and voltage with a small device, they find wide application in control of electric power, ranging from light dimmers and electric motor speed control to high-voltage direct current power transmission. Thyristors may be used in power-switching circuits, relay-replacement circuits, inverter circuits, oscillator circuits, level-detector circuits, chopper circuits, light-dimming circuits, low-cost timer circuits, logic circuits, speed-control circuits, phase-control circuits, etc. Originally thyristors relied only on current reversal to turn them off, making them difficult to apply for direct current; newer device types can be turned on and off through the control gate signal. A thyristor is not a proportional device like a transistor. In other words, a thyristor can only be fully on or off, while a transistor can lie in between on and off states. This makes a thyristor unsuitable as an analog amplifier, but useful as a switch.
Transistor > Thyristors > FET Transistors > MOSFET
Part No. | DS | Manufacturer | D/C | Qty | Region | Action |
---|---|---|---|---|---|---|
SPA11N60C3 | Infineon | 201546+ | 500 | China | Request A Quote | |
SPA11N60C3 | Infineon | 1937+ | 14000 | China | Request A Quote | |
SPA11N60C3 | Infineon | 1923 | 381 | Japan | Request A Quote | |
SPA11N60C3 | Infineon | 2001 | 20 | France | Request A Quote | |
SPA11N60C3 | Infineon | - | 5 | Taiwan | Request A Quote | |
SPA11N60C3 | Infineon | 2022 | 900 | China | Request A Quote | |
SPA11N60C3 | Infineon | 2023+ | 132 | China | Request A Quote | |
SPA11N60C3 | Infineon | 2022+ | 8500 | China | Request A Quote | |
SPA11N60C3 | Infineon | 200422 | 12 | U.S.A. | Request A Quote | |
SPA11N60C3 | Infineon | 201546+ | 500 | Hong Kong | Request A Quote | |
SPA11N60C3 | Infineon | 2022+ | 8800 | China | Request A Quote | |
SPA11N60C3 | Infineon | 2017+ | 15000 | China | Request A Quote | |
SPA11N60C3 | Infineon | 2021+ | 8800 | China | Request A Quote | |
SPA11N60C3 | Infineon | 202309+ | 150 | South Korea | Request A Quote | |
SPA11N60C3 | Infineon | 200825+ | 67 | China | Request A Quote | |
SPA11N60C3 | Infineon | - | 3125 | China | Request A Quote | |
SPA11N60C3 | Infineon | 200444 | 350 | Spain | Request A Quote |
Part No. Variations
- MDF100A
- MDF100A30
- MDF100A40
- MDF100A50
- MDF1073
- MDF10N60ZG
- MDF10N65B
- MDF11N60
- MDF11N60G
- MDF11N60TH
- MDF11N65B
- MDF12A1416PCF
- MDF12N50BTH
- MDF12N50FTH
- MDF12N50TH
- MDF13N50BTH
- MDF13N50TH
- MDF13N65BTH
- MDF14A7P25DS
- MDF150A
- MDF150A20L
- MDF150A20LM
- MDF150A20M
- MDF150A30
- MDF150A30L
- MDF150A30LM
- MDF150A30M
- MDF150A40L
- MDF150A40LM
- MDF150A40M
- MDF150A50
- MDF150ALM
- MDF156F
- MDF1602S
- MDF1623B
- MDF16N50GTH
- MDF1820A02
- MDF18N50BTH
- MDF18N50TH
- MDF18R01
- MDF1921TH
- MDF1922
- MDF1922TH
- MDF1R10MV2