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Thyristors

A thyristor is a solid-state semiconductor device with four layers of alternating N and P-type material. They act exclusively as bistable switches, conducting when their gate receives a current trigger, and continue to conduct while they are forward biased (that is, while the voltage across the device is not reversed). A three-lead thyristor is designed to control the larger current of its two leads by combining that current with the smaller current or voltage of its other lead - known as its control lead. In contrast, a two-lead thyristor is designed to 'switch on' if the potential difference between its leads is sufficiently large - a value representing its breakdown voltage. Some sources define silicon-controlled rectifiers and thyristors as synonymous. Other sources define thyristors as a larger set of devices with at least four layers of alternating N and P-type material. The first thyristor devices were released commercially in 1956. Because thyristors can control a relatively large amount of power and voltage with a small device, they find wide application in control of electric power, ranging from light dimmers and electric motor speed control to high-voltage direct current power transmission. Thyristors may be used in power-switching circuits, relay-replacement circuits, inverter circuits, oscillator circuits, level-detector circuits, chopper circuits, light-dimming circuits, low-cost timer circuits, logic circuits, speed-control circuits, phase-control circuits, etc. Originally thyristors relied only on current reversal to turn them off, making them difficult to apply for direct current; newer device types can be turned on and off through the control gate signal. A thyristor is not a proportional device like a transistor. In other words, a thyristor can only be fully on or off, while a transistor can lie in between on and off states. This makes a thyristor unsuitable as an analog amplifier, but useful as a switch.

Transistor > Thyristors > FET Transistors > MOSFET

Part No.	DS	Manufacturer	D/C	Qty	Region	Action
IPB036N12N3G		Infineon	-	8291	China	Request A Quote
IPB036N12N3G		Infineon	-	1000	Hong Kong	Request A Quote
IPB036N12N3G		Infineon	2015+	1360	China	Request A Quote
IPB036N12N3G		Infineon	2015+	900	China	Request A Quote
IPB036N12N3G		Infineon	201028+	15727	China	Request A Quote
IPB036N12N3G		Infineon	2024+	7000	Singapore	Request A Quote
IPB036N12N3G		Infineon	-	1059	China	Request A Quote
IPB036N12N3G		Infineon	-	1000	China	Request A Quote
IPB036N12N3G		Infineon	2024+	9000	China	Request A Quote
IPB036N12N3G		Infineon	2022+	10000	China	Request A Quote
IPB036N12N3G		Infineon	202128+	3600	China	Request A Quote
IPB036N12N3G		Infineon	2017	5000	Japan	Request A Quote
IPB036N12N3G		Infineon	2022+	3000	China	Request A Quote

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