Results for: FLLD216
in Thyristors
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Thyristors
A thyristor is a solid-state semiconductor device with four layers of alternating N and P-type material. They act exclusively as bistable switches, conducting when their gate receives a current trigger, and continue to conduct while they are forward biased (that is, while the voltage across the device is not reversed). A three-lead thyristor is designed to control the larger current of its two leads by combining that current with the smaller current or voltage of its other lead - known as its control lead. In contrast, a two-lead thyristor is designed to 'switch on' if the potential difference between its leads is sufficiently large - a value representing its breakdown voltage. Some sources define silicon-controlled rectifiers and thyristors as synonymous. Other sources define thyristors as a larger set of devices with at least four layers of alternating N and P-type material. The first thyristor devices were released commercially in 1956. Because thyristors can control a relatively large amount of power and voltage with a small device, they find wide application in control of electric power, ranging from light dimmers and electric motor speed control to high-voltage direct current power transmission. Thyristors may be used in power-switching circuits, relay-replacement circuits, inverter circuits, oscillator circuits, level-detector circuits, chopper circuits, light-dimming circuits, low-cost timer circuits, logic circuits, speed-control circuits, phase-control circuits, etc. Originally thyristors relied only on current reversal to turn them off, making them difficult to apply for direct current; newer device types can be turned on and off through the control gate signal. A thyristor is not a proportional device like a transistor. In other words, a thyristor can only be fully on or off, while a transistor can lie in between on and off states. This makes a thyristor unsuitable as an analog amplifier, but useful as a switch.
Transistor > Thyristors > Rectifiers
| Part No. | DS | Manufacturer | D/C | Qty | Region | Action |
|---|---|---|---|---|---|---|
| BAS216 | NXP | 2022+ | 5300 | South Korea | Request A Quote | |
| BAS216 | NXP | 2009+ | 20000 | China | Request A Quote | |
| BAS216 | NXP | - | 100 | U.S.A. | Request A Quote | |
| BAS216 | NXP | - | 200 | China | Request A Quote | |
| BAS216 | NXP | 2024+ | 18000 | China | Request A Quote | |
| BAS216 | NXP | 2022+ | 8000 | China | Request A Quote |
Transistor > Thyristors > FET Transistors > MOSFET
| Part No. | DS | Manufacturer | D/C | Qty | Region | Action |
|---|---|---|---|---|---|---|
| SCT2160KEC | Rohm | 2018+ | 10000 | China | Request A Quote |
Part No. Variations
- FLLD216
- FLLD258
- FLLD258TA
- FLLD261
- FLLD261TA
- FLLD263
- FLLD263TA
- FLLD3007AMHT3
- FLLD3012AANW1
- FLLD3030ASNR1
- FLLD3030ASNR1M
- FLLD3035ABNW9
- FLLD3036AANR1
- FLLD3036AANR2
- FLLD3050AABI11
- FLLD3050AANI1
- FLLD3050AFP031
- FLLD3050AHNR1
- FLLD3050ASNR1
- FLLD3055AMHT5
- FLLD3063AANR1
- FLLD3075AMHT5
- FLLD3100AMHT6
- FLLD3100ASNI1F
- FLLD3110AHNR1
- FLLD31K0APVI1
- FLLD31K6APVI1
- FLLD3200ASHR1
- FLLD3200ASNR12M
- FLLD3320APVI1
- FLLD4008AANR1
- FLLD4008ATHT3
- FLLD4016ATHT3
- FLLD4025AABR3
- FLLD4025AAD41
- FLLD4025ADNR1
- FLLD4036ATHT3
- FLLD4050AABR3
- FLLD4120ATHT6
- FLLD4160ATHT7
- FLLD4200ATHT7
- FLLDH025A235I3
- FLLDH100A025I0
- FLLDU040A225I0
- FLLDU040A445I0
- FLLDU100A026I1
- FLLDU100A225I0
- FLLDU100A945I0
- FLLDU100A945I8
- FLLDU100A945IO
- FLLDU200A026I0
- FLLDU200A445I0
- FLLDU300A026I0
- FLLDU300A225I0
- FLLDU300A945I0
