Results for: BA10B
in Thyristors
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Thyristors
A thyristor is a solid-state semiconductor device with four layers of alternating N and P-type material. They act exclusively as bistable switches, conducting when their gate receives a current trigger, and continue to conduct while they are forward biased (that is, while the voltage across the device is not reversed). A three-lead thyristor is designed to control the larger current of its two leads by combining that current with the smaller current or voltage of its other lead - known as its control lead. In contrast, a two-lead thyristor is designed to 'switch on' if the potential difference between its leads is sufficiently large - a value representing its breakdown voltage. Some sources define silicon-controlled rectifiers and thyristors as synonymous. Other sources define thyristors as a larger set of devices with at least four layers of alternating N and P-type material. The first thyristor devices were released commercially in 1956. Because thyristors can control a relatively large amount of power and voltage with a small device, they find wide application in control of electric power, ranging from light dimmers and electric motor speed control to high-voltage direct current power transmission. Thyristors may be used in power-switching circuits, relay-replacement circuits, inverter circuits, oscillator circuits, level-detector circuits, chopper circuits, light-dimming circuits, low-cost timer circuits, logic circuits, speed-control circuits, phase-control circuits, etc. Originally thyristors relied only on current reversal to turn them off, making them difficult to apply for direct current; newer device types can be turned on and off through the control gate signal. A thyristor is not a proportional device like a transistor. In other words, a thyristor can only be fully on or off, while a transistor can lie in between on and off states. This makes a thyristor unsuitable as an analog amplifier, but useful as a switch.
Transistor > Thyristors > FET Transistors > MOSFET
| Part No. | DS | Manufacturer | D/C | Qty | Region | Action |
|---|---|---|---|---|---|---|
| ZXMN10B08E6TA | Diodes | 1952 | 844 | China | Request A Quote | |
| ZXMN10B08E6TA | Diodes | 2023+ | 66540 | China | Request A Quote | |
| ZXMN10B08E6TA | Diodes | 201145 | 2586 | Germany | Request A Quote | |
| ZXMN10B08E6TA | Diodes | 2024+ | 3500 | China | Request A Quote |
Part No. Variations
- BA10
- BA100
- BA100006A
- BA100007A
- BA10006A
- BA100120615A
- BA10032V3A
- BA10032V5A
- BA10032V63A
- BA10033B12S
- BA10033B12U
- BA10070001
- BA10082162
- BA1008270
- BA1008276
- BA1008HMAQN
- BA101
- BA101915
- BA102
- BA10234AFE2
- BA1024AH
- BA1024H
- BA1026
- BA102EJ750J
- BA1030HMBQN
- BA10324
- BA10324A
- BA10324AF
- BA10324AFE1
- BA10324AFE2
- BA10324AFJGE2
- BA10324AFVE2
- BA10324AFVFE2
- BA10324F
- BA10339
- BA10339F
- BA10339FBZE2
- BA10339FE2
- BA10339FE2IC
- BA10339FT1
- BA10339FT2
- BA10339FV
- BA10339FVE2
- BA10358
- BA10358F
- BA10358FE1
- BA10358FE2
- BA10358FE2IC
- BA10358FFE2
- BA10358FGE2
- BA10358FSE2
- BA10358FT2
- BA10358FV
- BA10358FVFE2
- BA10358FVMTR
- BA10358FXE2
- BA10358N
- BA1038
- BA10393AF
- BA10393F
- BA10393FE
- BA10393FE2
- BA10393FFE2
- BA10393FGE2
- BA10393FHAE2
- BA10393FT2
- BA10393N
- BA104
- BA104H
- BA104H1
- BA104S01200
- BA105
- BA1050HMBQN
- BA1058HMQBN
- BA1061
- BA10818
- BA10820
- BA10821
- BA10824
- BA10826
- BA10827
- BA10828
- BA10829
- BA10832
- BA10835
- BA10838
- BA10839
- BA10841
- BA10842
- BA1087E
- BA1090
- BA1091DKH
- BA1099MAMSP
- BA10B
- BA10EL10
- BA10EUI
- BA10EZ8M
- BA10FPE2
- BA10G1UD
- BA10T
