Results for: 2325
in Thyristors
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Thyristors
A thyristor is a solid-state semiconductor device with four layers of alternating N and P-type material. They act exclusively as bistable switches, conducting when their gate receives a current trigger, and continue to conduct while they are forward biased (that is, while the voltage across the device is not reversed). A three-lead thyristor is designed to control the larger current of its two leads by combining that current with the smaller current or voltage of its other lead - known as its control lead. In contrast, a two-lead thyristor is designed to 'switch on' if the potential difference between its leads is sufficiently large - a value representing its breakdown voltage. Some sources define silicon-controlled rectifiers and thyristors as synonymous. Other sources define thyristors as a larger set of devices with at least four layers of alternating N and P-type material. The first thyristor devices were released commercially in 1956. Because thyristors can control a relatively large amount of power and voltage with a small device, they find wide application in control of electric power, ranging from light dimmers and electric motor speed control to high-voltage direct current power transmission. Thyristors may be used in power-switching circuits, relay-replacement circuits, inverter circuits, oscillator circuits, level-detector circuits, chopper circuits, light-dimming circuits, low-cost timer circuits, logic circuits, speed-control circuits, phase-control circuits, etc. Originally thyristors relied only on current reversal to turn them off, making them difficult to apply for direct current; newer device types can be turned on and off through the control gate signal. A thyristor is not a proportional device like a transistor. In other words, a thyristor can only be fully on or off, while a transistor can lie in between on and off states. This makes a thyristor unsuitable as an analog amplifier, but useful as a switch.
Transistor > Thyristors > FET Transistors > MOSFET
| Part No. | DS | Manufacturer | D/C | Qty | Region | Action |
|---|---|---|---|---|---|---|
| SI2325DS-T1-E3 | Vishay | 200940 | 14 | U.S.A. | Request A Quote | |
| SI2325DS-T1-E3 | Vishay | 2015+ | 155 | China | Request A Quote | |
| SI2325DS-T1-E3 | Vishay | 2013+ | 9709 | Japan | Request A Quote | |
| SI2325DS-T1-E3 | Vishay | - | 6 | U.S.A. | Request A Quote | |
| SI2325DS-T1-E3 | Vishay | - | 8191 | China | Request A Quote | |
| SI2325DS-T1-E3 | Vishay | 2019+ | 84700 | China | Request A Quote | |
| SI2325DS-T1-E3 | Vishay | 2012+ | 101 | China | Request A Quote | |
| SI2325DS-T1-E3 | Vishay | 2012+ | 18150 | Japan | Request A Quote | |
| SI2325DS-T1-E3 | Vishay | - | 33600 | United Kingdom | Request A Quote | |
| SI2325DS-T1-E3 | Vishay | 2012+ | 205 | China | Request A Quote |
Part No. Variations
- 2325
- 232502007000
- 23250804
- 23250982
- 23250987
- 23250988
- 2325101
- 23251021
- 23251027
- 23251031
- 23251037
- 232512000
- 23251283
- 2325182
- 2325200010000070
- 23252013901
- 232532
- 2325320
- 23253472
- 23253492
- 23253493
- 23254151
- 23254191
- 232550029
- 23255291
- 23255311
- 23255841
- 232561105
- 232561106
- 2325621
- 2325622
- 23256611
- 232577924
- 23258072
- 23258112
- 23258113
- 232582007000
- 23258642
- 232587
- 2325881
- 2325891
- 232590851
