검색 결과: SPA11N60C3 in Thyristors
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Thyristors

A thyristor is a solid-state semiconductor device with four layers of alternating N and P-type material. They act exclusively as bistable switches, conducting when their gate receives a current trigger, and continue to conduct while they are forward biased (that is, while the voltage across the device is not reversed). A three-lead thyristor is designed to control the larger current of its two leads by combining that current with the smaller current or voltage of its other lead - known as its control lead. In contrast, a two-lead thyristor is designed to 'switch on' if the potential difference between its leads is sufficiently large - a value representing its breakdown voltage. Some sources define silicon-controlled rectifiers and thyristors as synonymous. Other sources define thyristors as a larger set of devices with at least four layers of alternating N and P-type material. The first thyristor devices were released commercially in 1956. Because thyristors can control a relatively large amount of power and voltage with a small device, they find wide application in control of electric power, ranging from light dimmers and electric motor speed control to high-voltage direct current power transmission. Thyristors may be used in power-switching circuits, relay-replacement circuits, inverter circuits, oscillator circuits, level-detector circuits, chopper circuits, light-dimming circuits, low-cost timer circuits, logic circuits, speed-control circuits, phase-control circuits, etc. Originally thyristors relied only on current reversal to turn them off, making them difficult to apply for direct current; newer device types can be turned on and off through the control gate signal. A thyristor is not a proportional device like a transistor. In other words, a thyristor can only be fully on or off, while a transistor can lie in between on and off states. This makes a thyristor unsuitable as an analog amplifier, but useful as a switch.

Transistor > Thyristors > FET Transistors > MOSFET

부품 번호	DS	제조 업체	D/C	수량	지역	액션
SPA11N60C3		Infineon	201546+	500	China	견적 요청서
SPA11N60C3		Infineon	1937+	14000	China	견적 요청서
SPA11N60C3		Infineon	1923	381	Japan	견적 요청서
SPA11N60C3		Infineon	2001	20	France	견적 요청서
SPA11N60C3		Infineon	-	5	Taiwan	견적 요청서
SPA11N60C3		Infineon	2022	900	China	견적 요청서
SPA11N60C3		Infineon	2023+	132	China	견적 요청서
SPA11N60C3		Infineon	200422	12	U.S.A.	견적 요청서
SPA11N60C3		Infineon	2017+	15000	China	견적 요청서
SPA11N60C3		Infineon	2021+	8800	China	견적 요청서
SPA11N60C3		Infineon	2024+	5000	China	견적 요청서
SPA11N60C3		Infineon	-	500	China	견적 요청서
SPA11N60C3		Infineon	2023+	1500	China	견적 요청서
SPA11N60C3		Infineon	202309+	150	South Korea	견적 요청서
SPA11N60C3		Infineon	-	6300	Japan	견적 요청서
SPA11N60C3		Infineon	2022+	17000	China	견적 요청서
SPA11N60C3		Infineon	200444	350	Spain	견적 요청서

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