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Thyristors

A thyristor is a solid-state semiconductor device with four layers of alternating N and P-type material. They act exclusively as bistable switches, conducting when their gate receives a current trigger, and continue to conduct while they are forward biased (that is, while the voltage across the device is not reversed). A three-lead thyristor is designed to control the larger current of its two leads by combining that current with the smaller current or voltage of its other lead - known as its control lead. In contrast, a two-lead thyristor is designed to 'switch on' if the potential difference between its leads is sufficiently large - a value representing its breakdown voltage. Some sources define silicon-controlled rectifiers and thyristors as synonymous. Other sources define thyristors as a larger set of devices with at least four layers of alternating N and P-type material. The first thyristor devices were released commercially in 1956. Because thyristors can control a relatively large amount of power and voltage with a small device, they find wide application in control of electric power, ranging from light dimmers and electric motor speed control to high-voltage direct current power transmission. Thyristors may be used in power-switching circuits, relay-replacement circuits, inverter circuits, oscillator circuits, level-detector circuits, chopper circuits, light-dimming circuits, low-cost timer circuits, logic circuits, speed-control circuits, phase-control circuits, etc. Originally thyristors relied only on current reversal to turn them off, making them difficult to apply for direct current; newer device types can be turned on and off through the control gate signal. A thyristor is not a proportional device like a transistor. In other words, a thyristor can only be fully on or off, while a transistor can lie in between on and off states. This makes a thyristor unsuitable as an analog amplifier, but useful as a switch.

Transistor > Thyristors > FET Transistors > MOSFET

型号	DS	厂牌	批号	数量	地区	采购
SI2325DS-T1-E3		Vishay	200940	14	美国	要求报价
SI2325DS-T1-E3		Vishay	2015+	155	中国	要求报价
SI2325DS-T1-E3		Vishay	2019+	77000	日本	要求报价
SI2325DS-T1-E3		Vishay	2013+	9709	日本	要求报价
SI2325DS-T1-E3		Vishay	2012+	100	中国	要求报价
SI2325DS-T1-E3		Vishay	-	6	美国	要求报价
SI2325DS-T1-E3		Vishay	-	8191	中国	要求报价
SI2325DS-T1-E3		Vishay	-	1000	香港	要求报价
SI2325DS-T1-E3		Vishay	-	28800	英国	要求报价
SI2325DS-T1-E3		Vishay	2012+	92	中国	要求报价
SI2325DS-T1-E3		Vishay	-	41980	波兰	要求报价
SI2325DS-T1-E3		Vishay	2013+	7547	中国	要求报价
SI2325DS-T1-E3		Vishay	2012+	205	中国	要求报价

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