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Thyristors
A thyristor is a solid-state semiconductor device with four layers of alternating N and P-type material. They act exclusively as bistable switches, conducting when their gate receives a current trigger, and continue to conduct while they are forward biased (that is, while the voltage across the device is not reversed). A three-lead thyristor is designed to control the larger current of its two leads by combining that current with the smaller current or voltage of its other lead - known as its control lead. In contrast, a two-lead thyristor is designed to 'switch on' if the potential difference between its leads is sufficiently large - a value representing its breakdown voltage. Some sources define silicon-controlled rectifiers and thyristors as synonymous. Other sources define thyristors as a larger set of devices with at least four layers of alternating N and P-type material. The first thyristor devices were released commercially in 1956. Because thyristors can control a relatively large amount of power and voltage with a small device, they find wide application in control of electric power, ranging from light dimmers and electric motor speed control to high-voltage direct current power transmission. Thyristors may be used in power-switching circuits, relay-replacement circuits, inverter circuits, oscillator circuits, level-detector circuits, chopper circuits, light-dimming circuits, low-cost timer circuits, logic circuits, speed-control circuits, phase-control circuits, etc. Originally thyristors relied only on current reversal to turn them off, making them difficult to apply for direct current; newer device types can be turned on and off through the control gate signal. A thyristor is not a proportional device like a transistor. In other words, a thyristor can only be fully on or off, while a transistor can lie in between on and off states. This makes a thyristor unsuitable as an analog amplifier, but useful as a switch.
Transistor > Thyristors > IGBT Transistors > IGBT Module
| Наименование детали | DS | Производитель | Дата выпуска | Кол-во | Регион | Активный |
|---|---|---|---|---|---|---|
| FF200R12KE3 |  |
Infineon | 2017+ | 2000 | Hong Kong | Связаться с продавцом |
| FF200R12KE3 | |
Infineon | - | 10 | China | Связаться с продавцом |
Transistor > Thyristors > Bipolar Transistors > GP BJT
Вариации номера комплектующего
- NTD20
- NTD20N03
- NTD20N03L27
- NTD20N03L27G
- NTD20N03L27T4
- NTD20N03L27T4G
- NTD20N03L7G
- NTD20N03RT4G
- NTD20N06G
- NTD20N06HD
- NTD20N06HDT4
- NTD20N06HL
- NTD20N06L
- NTD20N06L001
- NTD20N06L1G
- NTD20N06LG
- NTD20N06LT4G
- NTD20N06LT4GIC
- NTD20N06MOS
- NTD20N06T4G
- NTD20P03HDLT4
- NTD20P06HDL
- NTD20P06HL
- NTD20P06HLT4G
- NTD20P06L
- NTD20P06L001
- NTD20P06L1G
- NTD20P06LG
- NTD20P06LGMOS
- NTD20P06LMOS
- NTD20P06LT
- NTD20P06LT4
- NTD20P06LT4G
- NTD20P06MOS
- NTD23N03
- NTD23N03R
- NTD23N03RGMOS
- NTD23N03RT4
- NTD23N03RT4G
- NTD23N03RT4GMOS
- NTD23N03RT4MOS
- NTD24N06G
- NTD24N06L
- NTD24N06L001
- NTD24N06L1
- NTD24N06LG
- NTD24N06LT
- NTD24N06LT4
- NTD24N06LT4G
- NTD24N06MOS
- NTD24N06T4
- NTD24N06T4G
- NTD25P03
- NTD25P03L
- NTD25P03L1
- NTD25P03L1G
- NTD25P03LG
- NTD25P03LMOS
- NTD25P03LRLG
- NTD25P03LT
- NTD25P03LT4
- NTD25P03LT4G
- NTD2955
- NTD29551G
- NTD2955G
- NTD2955MOS
- NTD2955T4
- NTD2955T4G
- NTD2955T4GDPAK