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Thyristors
A thyristor is a solid-state semiconductor device with four layers of alternating N and P-type material. They act exclusively as bistable switches, conducting when their gate receives a current trigger, and continue to conduct while they are forward biased (that is, while the voltage across the device is not reversed). A three-lead thyristor is designed to control the larger current of its two leads by combining that current with the smaller current or voltage of its other lead - known as its control lead. In contrast, a two-lead thyristor is designed to 'switch on' if the potential difference between its leads is sufficiently large - a value representing its breakdown voltage. Some sources define silicon-controlled rectifiers and thyristors as synonymous. Other sources define thyristors as a larger set of devices with at least four layers of alternating N and P-type material. The first thyristor devices were released commercially in 1956. Because thyristors can control a relatively large amount of power and voltage with a small device, they find wide application in control of electric power, ranging from light dimmers and electric motor speed control to high-voltage direct current power transmission. Thyristors may be used in power-switching circuits, relay-replacement circuits, inverter circuits, oscillator circuits, level-detector circuits, chopper circuits, light-dimming circuits, low-cost timer circuits, logic circuits, speed-control circuits, phase-control circuits, etc. Originally thyristors relied only on current reversal to turn them off, making them difficult to apply for direct current; newer device types can be turned on and off through the control gate signal. A thyristor is not a proportional device like a transistor. In other words, a thyristor can only be fully on or off, while a transistor can lie in between on and off states. This makes a thyristor unsuitable as an analog amplifier, but useful as a switch.
Transistor > Thyristors > FET Transistors > MOSFET
Part No. | DS | Manufacturer | D/C | Qty | Region | Action |
---|---|---|---|---|---|---|
ZXMN10B08E6TA | Diodes | 201313 | 100 | Taiwan | Request A Quote | |
ZXMN10B08E6TA | Diodes | 2024+ | 3500 | China | Request A Quote | |
ZXMN10B08E6TA | Diodes | 2023+ | 66540 | China | Request A Quote | |
ZXMN10B08E6TA | Diodes | 201145 | 2586 | Germany | Request A Quote | |
ZXMN10B08E6TA | Diodes | - | 2400 | United Kingdom | Request A Quote | |
ZXMN10B08E6TA | Diodes | 2022+ | 9000 | China | Request A Quote | |
ZXMN10B08E6TA | Diodes | 1952 | 844 | China | Request A Quote |
Part No. Variations
- LB100050
- LB1000OHM1US
- LB1006AB
- LB1006BU0202303
- LB1006RD
- LB1008AE
- LB1009AE
- LB100MFD10
- LB100UF2016V
- LB1010B12
- LB1011AB
- LB1012AD
- LB1013AD
- LB1013AH
- LB1013AW
- LB1019BB
- LB1020AF
- LB1021AB
- LB1021AD
- LB1026AB
- LB102L121
- LB1048AXTR
- LB104S01TL01
- LB104S01TL02
- LB104S02TD01
- LB104S03A1
- LB104V03A1
- LB104V03TD01
- LB1060AB
- LB1068BC
- LB1068BW
- LB106GY
- LB106RD
- LB1074AH
- LB10B
- LB10EHF
- LB10F1
- LB10GA
- LB10SA
- LB10SE
- LB10STR