Results for: IRGBC30U
in Thyristors
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Thyristors
A thyristor is a solid-state semiconductor device with four layers of alternating N and P-type material. They act exclusively as bistable switches, conducting when their gate receives a current trigger, and continue to conduct while they are forward biased (that is, while the voltage across the device is not reversed). A three-lead thyristor is designed to control the larger current of its two leads by combining that current with the smaller current or voltage of its other lead - known as its control lead. In contrast, a two-lead thyristor is designed to 'switch on' if the potential difference between its leads is sufficiently large - a value representing its breakdown voltage. Some sources define silicon-controlled rectifiers and thyristors as synonymous. Other sources define thyristors as a larger set of devices with at least four layers of alternating N and P-type material. The first thyristor devices were released commercially in 1956. Because thyristors can control a relatively large amount of power and voltage with a small device, they find wide application in control of electric power, ranging from light dimmers and electric motor speed control to high-voltage direct current power transmission. Thyristors may be used in power-switching circuits, relay-replacement circuits, inverter circuits, oscillator circuits, level-detector circuits, chopper circuits, light-dimming circuits, low-cost timer circuits, logic circuits, speed-control circuits, phase-control circuits, etc. Originally thyristors relied only on current reversal to turn them off, making them difficult to apply for direct current; newer device types can be turned on and off through the control gate signal. A thyristor is not a proportional device like a transistor. In other words, a thyristor can only be fully on or off, while a transistor can lie in between on and off states. This makes a thyristor unsuitable as an analog amplifier, but useful as a switch.
Transistor > Thyristors > FET Transistors > MOSFET
Part No. | DS | Manufacturer | D/C | Qty | Region | Action |
---|---|---|---|---|---|---|
PMV30UN | NXP | 2013+ | 2200 | China | Request A Quote | |
PMV30UN | NXP | 2008+ | 2039 | United Kingdom | Request A Quote | |
PMV30UN | NXP | 2021+ | 33000 | Japan | Request A Quote |
Part No. Variations
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- IRGB15B60KD
- IRGB15B60KDPBF
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- IRGB20B60PD1PBF
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- IRGB30B60KPBF
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- IRGB4056
- IRGB4056DPBF
- IRGB4059DPBF
- IRGB4060D
- IRGB4060DPBF
- IRGB4061D
- IRGB4061DPBF
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- IRGB4062DPBF
- IRGB4064D
- IRGB4064DPBF
- IRGB410
- IRGB410U
- IRGB420
- IRGB420U
- IRGB420UD2
- IRGB4263PBF
- IRGB430U
- IRGB440U
- IRGB4607DPBF
- IRGB4610DPBF
- IRGB4615DPBF
- IRGB4630DPBF
- IRGB4630PBF
- IRGB4640DPBF
- IRGB4650DEPBF
- IRGB4B60K
- IRGB5B120KD
- IRGB5B120KDPBF
- IRGB6B60K
- IRGB6B60KD
- IRGB6B60KDPBF
- IRGB6B60KPBF
- IRGB76502
- IRGB8B60K
- IRGB8B60KPBF
- IRGBC20
- IRGBC20F
- IRGBC20F2D
- IRGBC20FD2
- IRGBC20FD2S
- IRGBC20FS
- IRGBC20K
- IRGBC20KD2S
- IRGBC20KSPBF
- IRGBC20S
- IRGBC20SD2
- IRGBC20U
- IRGBC20UD2
- IRGBC22
- IRGBC26
- IRGBC30
- IRGBC30D2
- IRGBC30F
- IRGBC30F3
- IRGBC30FD2S
- IRGBC30FS
- IRGBC30K
- IRGBC30KD2S
- IRGBC30MD2
- IRGBC30N4
- IRGBC30S
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- IRGBC30UD
- IRGBC32
- IRGBC32F
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