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Thyristors
A thyristor is a solid-state semiconductor device with four layers of alternating N and P-type material. They act exclusively as bistable switches, conducting when their gate receives a current trigger, and continue to conduct while they are forward biased (that is, while the voltage across the device is not reversed). A three-lead thyristor is designed to control the larger current of its two leads by combining that current with the smaller current or voltage of its other lead - known as its control lead. In contrast, a two-lead thyristor is designed to 'switch on' if the potential difference between its leads is sufficiently large - a value representing its breakdown voltage. Some sources define silicon-controlled rectifiers and thyristors as synonymous. Other sources define thyristors as a larger set of devices with at least four layers of alternating N and P-type material. The first thyristor devices were released commercially in 1956. Because thyristors can control a relatively large amount of power and voltage with a small device, they find wide application in control of electric power, ranging from light dimmers and electric motor speed control to high-voltage direct current power transmission. Thyristors may be used in power-switching circuits, relay-replacement circuits, inverter circuits, oscillator circuits, level-detector circuits, chopper circuits, light-dimming circuits, low-cost timer circuits, logic circuits, speed-control circuits, phase-control circuits, etc. Originally thyristors relied only on current reversal to turn them off, making them difficult to apply for direct current; newer device types can be turned on and off through the control gate signal. A thyristor is not a proportional device like a transistor. In other words, a thyristor can only be fully on or off, while a transistor can lie in between on and off states. This makes a thyristor unsuitable as an analog amplifier, but useful as a switch.
Transistor > Thyristors > Rectifiers
型号 | DS | 厂牌 | 批号 | 数量 | 地区 | 采购 |
---|---|---|---|---|---|---|
US1G-E3/61T | Vishay | 2021+ | 18000 | 中国 | 要求报价 | |
US1G-E3/61T | Vishay | 200844 | 682 | 西班牙 | 要求报价 | |
US1GE361T | Vishay | - | 8745 | 德国 | 要求报价 | |
US1G-E3/61T | Vishay | 201047 | 1750 | 美国 | 要求报价 | |
US1G-E3/61T | Vishay | 200731 | 1600 | 美国 | 要求报价 | |
US1G-E3/61T | Vishay | 201225 | 308 | 印度 | 要求报价 | |
US1G-E3/61T | Vishay | 201314 | 988 | 印度 | 要求报价 | |
US1G-E3/61T | Vishay | 201118 | 280 | 印度 | 要求报价 | |
US1G-E3/61T | Vishay | 200826 | 1437 | 美国 | 要求报价 | |
US1G-E3/61T | Vishay | 201108 | 3535 | 西班牙 | 要求报价 | |
US1G-E3/61T | Vishay | 201825 | 709 | 西班牙 | 要求报价 | |
US1GE361T | Vishay | - | 896 | 法国 | 要求报价 | |
US1G-E3/61T | Vishay | - | 1500 | 中国 | 要求报价 | |
US1G-E3/61T | Vishay | 2023+ | 37500 | 中国 | 要求报价 | |
US1G-E3/61T | Vishay | 2007+ | 1595 | 美国 | 要求报价 | |
US1G-E3/61T | Vishay | 2022+ | 14400 | 台湾 | 要求报价 | |
US1G-E3/61T | Vishay | 2021+ | 1800 | 中国 | 要求报价 | |
US1G-E361T | Vishay | 2020+ | 202050 | 日本 | 要求报价 | |
US1G-E3/61T | Vishay | 2021+ | 8300 | 中国 | 要求报价 | |
US1G-E3/61T | Vishay | 2023+ | 30000 | 中国 | 要求报价 | |
US1G-E3/61T | Vishay | 2024+ | 338400 | 中国 | 要求报价 | |
US1G-E3/61T | Vishay | - | 13607 | 中国 | 要求报价 | |
US1G-E3/61T | Vishay | 201612 | 2315 | 以色列 | 要求报价 | |
US1GE361T | Vishay | - | 6500 | 中国 | 要求报价 | |
US1G-E3/61T | Vishay | - | 96600 | 中国 | 要求报价 |