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Thyristors
A thyristor is a solid-state semiconductor device with four layers of alternating N and P-type material. They act exclusively as bistable switches, conducting when their gate receives a current trigger, and continue to conduct while they are forward biased (that is, while the voltage across the device is not reversed). A three-lead thyristor is designed to control the larger current of its two leads by combining that current with the smaller current or voltage of its other lead - known as its control lead. In contrast, a two-lead thyristor is designed to 'switch on' if the potential difference between its leads is sufficiently large - a value representing its breakdown voltage. Some sources define silicon-controlled rectifiers and thyristors as synonymous. Other sources define thyristors as a larger set of devices with at least four layers of alternating N and P-type material. The first thyristor devices were released commercially in 1956. Because thyristors can control a relatively large amount of power and voltage with a small device, they find wide application in control of electric power, ranging from light dimmers and electric motor speed control to high-voltage direct current power transmission. Thyristors may be used in power-switching circuits, relay-replacement circuits, inverter circuits, oscillator circuits, level-detector circuits, chopper circuits, light-dimming circuits, low-cost timer circuits, logic circuits, speed-control circuits, phase-control circuits, etc. Originally thyristors relied only on current reversal to turn them off, making them difficult to apply for direct current; newer device types can be turned on and off through the control gate signal. A thyristor is not a proportional device like a transistor. In other words, a thyristor can only be fully on or off, while a transistor can lie in between on and off states. This makes a thyristor unsuitable as an analog amplifier, but useful as a switch.
Transistor > Thyristors > Rectifiers
Part No. | DS | Manufacturer | D/C | Qty | Region | Action |
---|---|---|---|---|---|---|
DSEK60-02A | IXYS | 2019+ | 402 | China | Request A Quote | |
DSEK60-02A | IXYS | - | 1950 | Hong Kong | Request A Quote | |
DSEK60-02A | IXYS | 2020+ | 2592 | China | Request A Quote | |
DSEK60-02A | IXYS | 2021+ | 11351 | China | Request A Quote | |
DSEK60-02A | IXYS | 2020+ | 3000 | Singapore | Request A Quote | |
DSEK60-02A | IXYS | 2020+ | 660 | China | Request A Quote | |
DSEK60-02A | IXYS | 2022+ | 12700 | China | Request A Quote | |
DSEK60-02A | IXYS | 2020+ | 330 | Japan | Request A Quote | |
DSEK60-02A | IXYS | - | 101 | Canada | Request A Quote | |
DSEK60-02A | IXYS | 200332 | 579 | U.S.A. | Request A Quote |
Transistor > Thyristors > FET Transistors > MOSFET
Part No. | DS | Manufacturer | D/C | Qty | Region | Action |
---|---|---|---|---|---|---|
IPW60R075CP | Infineon | 2009+ | 120 | Hong Kong | Request A Quote | |
IPW60R075CP | Infineon | 201424+ | 161 | Hong Kong | Request A Quote | |
IPW60R075CP | Infineon | 2012+ | 530 | South Korea | Request A Quote | |
IPW60R075CP | Infineon | 2012+ | 530 | U.S.A. | Request A Quote | |
IPW60R075CP | Infineon | 201334+ | 378 | China | Request A Quote | |
IPW60R075CP | Infineon | - | 500 | Hong Kong | Request A Quote | |
IPW60R075CP | Infineon | - | 2200 | Hong Kong | Request A Quote | |
IPW60R075CP | Infineon | 2009+ | 264 | China | Request A Quote | |
IPA60R099C6 | Infineon | 201209+ | 5711 | Japan | Request A Quote | |
IPA60R099C6 | Infineon | 2022+ | 4500 | Hong Kong | Request A Quote | |
IPA60R099C6 | Infineon | 201644+ | 310 | Hong Kong | Request A Quote | |
IPP60R099CP | Infineon | 2021+ | 5000 | Hong Kong | Request A Quote | |
IPP60R099CP | Infineon | 2022+ | 5000 | Hong Kong | Request A Quote | |
IPP60R099CP | Infineon | 2022+ | 6000 | Singapore | Request A Quote | |
IPP60R099CP | Infineon | 2019+ | 10000 | China | Request A Quote |