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Thyristors
A thyristor is a solid-state semiconductor device with four layers of alternating N and P-type material. They act exclusively as bistable switches, conducting when their gate receives a current trigger, and continue to conduct while they are forward biased (that is, while the voltage across the device is not reversed). A three-lead thyristor is designed to control the larger current of its two leads by combining that current with the smaller current or voltage of its other lead - known as its control lead. In contrast, a two-lead thyristor is designed to 'switch on' if the potential difference between its leads is sufficiently large - a value representing its breakdown voltage. Some sources define silicon-controlled rectifiers and thyristors as synonymous. Other sources define thyristors as a larger set of devices with at least four layers of alternating N and P-type material. The first thyristor devices were released commercially in 1956. Because thyristors can control a relatively large amount of power and voltage with a small device, they find wide application in control of electric power, ranging from light dimmers and electric motor speed control to high-voltage direct current power transmission. Thyristors may be used in power-switching circuits, relay-replacement circuits, inverter circuits, oscillator circuits, level-detector circuits, chopper circuits, light-dimming circuits, low-cost timer circuits, logic circuits, speed-control circuits, phase-control circuits, etc. Originally thyristors relied only on current reversal to turn them off, making them difficult to apply for direct current; newer device types can be turned on and off through the control gate signal. A thyristor is not a proportional device like a transistor. In other words, a thyristor can only be fully on or off, while a transistor can lie in between on and off states. This makes a thyristor unsuitable as an analog amplifier, but useful as a switch.
Transistor > Thyristors > FET Transistors > MOSFET
型号 | DS | 厂牌 | 批号 | 数量 | 地区 | 采购 |
---|---|---|---|---|---|---|
SI4900DY-T1-E3 | Vishay | 2017+ | 757 | 中国 | 要求报价 | |
SI4900DY-T1-E3 | Vishay | 2008+ | 44900 | 香港 | 要求报价 | |
SI4900DYT1E3 | Vishay | 2008+ | 4992 | 奥地利 | 要求报价 | |
SI4900DY-T1-E3 | Vishay | 2024+ | 21607 | 中国 | 要求报价 | |
SI4900DY-T1-E3 | Vishay | - | 66401 | 中国 | 要求报价 | |
IRF4905PBF | IR | 2024+ | 600 | 中国 | 要求报价 | |
IRF4905PBF | IR | - | 579 | 德国 | 要求报价 | |
IRF4905PBF | IR | - | 10000 | 台湾 | 要求报价 | |
IRF4905PBF | IR | 201032 | 5 | 西班牙 | 要求报价 | |
IRF4905PBF | IR | 2018+ | 35 | 中国 | 要求报价 | |
IRF4905PBF | IR | 2010+ | 46 | 中国 | 要求报价 | |
IRF4905PBF | IR | - | 20 | 台湾 | 要求报价 | |
IRF4905PBF | IR | 2023+ | 25537 | 中国 | 要求报价 | |
IRF4905PBF | IR | 2008+ | 74 | 日本 | 要求报价 | |
IRF4905PBF | IR | - | 101 | 台湾 | 要求报价 | |
IRF4905PBF | IR | - | 150 | 美国 | 要求报价 | |
IRF4905PBF | IR | 2018+ | 23000 | 中国 | 要求报价 | |
IRF4905PBF | IR | 2016+ | 58834 | 中国 | 要求报价 | |
IRF4905PBF | IR | 201026+ | 33000 | 日本 | 要求报价 | |
IRF4905PBF | IR | - | 63 | 台湾 | 要求报价 | |
IRF4905PBF | IR | - | 50 | 香港 | 要求报价 | |
IRF4905PBF | IR | - | 989 | 中国 | 要求报价 | |
IRF4905PBF | IR | - | 1600 | 中国 | 要求报价 | |
IRF4905PBF | IR | 2010+ | 172 | 以色列 | 要求报价 | |
IRF4905PBF | IR | 2006 | 7 | 美国 | 要求报价 |
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