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Thyristors
A thyristor is a solid-state semiconductor device with four layers of alternating N and P-type material. They act exclusively as bistable switches, conducting when their gate receives a current trigger, and continue to conduct while they are forward biased (that is, while the voltage across the device is not reversed). A three-lead thyristor is designed to control the larger current of its two leads by combining that current with the smaller current or voltage of its other lead - known as its control lead. In contrast, a two-lead thyristor is designed to 'switch on' if the potential difference between its leads is sufficiently large - a value representing its breakdown voltage. Some sources define silicon-controlled rectifiers and thyristors as synonymous. Other sources define thyristors as a larger set of devices with at least four layers of alternating N and P-type material. The first thyristor devices were released commercially in 1956. Because thyristors can control a relatively large amount of power and voltage with a small device, they find wide application in control of electric power, ranging from light dimmers and electric motor speed control to high-voltage direct current power transmission. Thyristors may be used in power-switching circuits, relay-replacement circuits, inverter circuits, oscillator circuits, level-detector circuits, chopper circuits, light-dimming circuits, low-cost timer circuits, logic circuits, speed-control circuits, phase-control circuits, etc. Originally thyristors relied only on current reversal to turn them off, making them difficult to apply for direct current; newer device types can be turned on and off through the control gate signal. A thyristor is not a proportional device like a transistor. In other words, a thyristor can only be fully on or off, while a transistor can lie in between on and off states. This makes a thyristor unsuitable as an analog amplifier, but useful as a switch.
Transistor > Thyristors > Rectifiers
| Part No. | DS | Manufacturer | D/C | Qty | Region | Action |
|---|---|---|---|---|---|---|
| ZHCS1000TA |  |
Diodes | 2013 | 6478 | Japan | Request A Quote |
| ZHCS1000TA | |
Diodes | 2018+ | 10000 | China | Request A Quote |
| ZHCS1000TA | |
Diodes | 2018+ | 8912 | China | Request A Quote |
| ZHCS1000TA | |
Diodes | 2013 | 32750 | Japan | Request A Quote |
| ZHCS1000TA | |
Diodes | 2023+ | 54000 | China | Request A Quote |
| ZHCS1000TA | |
Diodes | 2009+ | 2500 | Sweden | Request A Quote |
| ZHCS1000TA | |
Diodes | 2024+ | 10000 | China | Request A Quote |
| ZHCS1000TA | |
Diodes | 2020+ | 3000 | U.S.A. | Request A Quote |
Transistor > Thyristors > Rectifiers > Bridge Rectifier
| Part No. | DS | Manufacturer | D/C | Qty | Region | Action |
|---|---|---|---|---|---|---|
| GBJ1006-F | |
Diodes | 2014+ | 160 | Hong Kong | Request A Quote |
| GBJ1006F | |
Diodes | - | 60 | Germany | Request A Quote |
Transistor > Thyristors > FET Transistors > MOSFET
| Part No. | DS | Manufacturer | D/C | Qty | Region | Action |
|---|---|---|---|---|---|---|
| VP1008B | |
NJS | - | 6276 | U.S.A. | Request A Quote |
Transistor > Thyristors > Rectifiers > Bridge Rectifier
| Part No. | DS | Manufacturer | D/C | Qty | Region | Action |
|---|---|---|---|---|---|---|
| DF100AA160 | |
SANREX | - | 387 | Hong Kong | Request A Quote |
| DF100AA160 | |
SANREX | 2007+ | 140 | Japan | Request A Quote |
| DF100AA160 | |
SANREX | - | 65 | China | Request A Quote |
| DF100AA160 | |
SANREX | - | 100 | Japan | Request A Quote |
| DF100AA160 | |
SANREX | - | 290 | Hong Kong | Request A Quote |
| DF100AA160 | |
SANREX | 201208+ | 9000 | Hong Kong | Request A Quote |
Transistor > Thyristors > FET Transistors > MOSFET
| Part No. | DS | Manufacturer | D/C | Qty | Region | Action |
|---|---|---|---|---|---|---|
| IPD100N04S4-02 | |
Infineon | 201617+ | 239 | China | Request A Quote |
| IPD100N04S4-02 | |
Infineon | 2024+ | 15000 | China | Request A Quote |
| IPD100N04S4-02 | |
Infineon | - | 5511 | Hong Kong | Request A Quote |
| IPD100N04S4-02 | |
Infineon | - | 10435 | China | Request A Quote |
| IPD100N04S4-02 | |
Infineon | 201617+ | 239 | Hong Kong | Request A Quote |
| IPD100N04S4-02 | |
Infineon | 2022+ | 16564 | China | Request A Quote |
| IPD100N04S4-02 | |
Infineon | 2021+ | 2500 | South Korea | Request A Quote |
| IPD100N04S4-02 | |
Infineon | 2022+ | 5000 | China | Request A Quote |
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